 |  | | |
| PartNumber | SI4101DY-T1-GE3 | SI4101DY | SI4101DY-T1-E3 |
| Description | MOSFET -30V Vds 20V Vgs SO-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 25.7 A | - | - |
| Rds On Drain Source Resistance | 5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 203 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 6 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI4 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 72 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 80 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4101DY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | |
| SI4101DY | Neu und Original | ||
| SI4101DY-T1-E3 | Neu und Original | ||
Vishay |
SI4101DY-T1-GE3 | MOSFET P-CH 30V 25.7A 8SOIC |