PartNumber | SI4401DDY-T1-GE3 | SI4401DY-T1-E3 | SI4401DY-T1-GE3 |
Description | MOSFET -40V Vds 20V Vgs SO-8 | MOSFET RECOMMENDED ALT 781-SI4401DDY-T1-GE3 | IGBT Transistors MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V |
Manufacturer | Vishay | Vishay | Vishay / Siliconix |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | E | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SO-8 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 16.1 A | - | - |
Rds On Drain Source Resistance | 15 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 64 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 6.3 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Reel |
Series | SI4 | SI4 | - |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 37 S | - | - |
Fall Time | 9 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 45 ns | - | - |
Typical Turn On Delay Time | 13 ns | - | - |
Part # Aliases | SI4401DDY-GE3 | SI4401DY-E3 | - |
Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
Part Aliases | - | - | SI4401DY-GE3 |
Package Case | - | - | SO-8 |
Pd Power Dissipation | - | - | 1.5 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 8.7 A |
Vds Drain Source Breakdown Voltage | - | - | - 40 V |
Rds On Drain Source Resistance | - | - | 15.5 mOhms |