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| PartNumber | SI4464DY-T1-E3 | SI4464DY-T1-E3-CUT TAPE | SI4464DY-T1 |
| Description | MOSFET 200V Vds 20V Vgs SO-8 | ||
| Manufacturer | Vishay | - | Vishay Siliconix |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | - | TrenchFETR |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4464DY-T1 | - | - |
| Unit Weight | 0.006596 oz | - | 0.006596 oz |
| Part Aliases | - | - | SI4464DY-T1 |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | 8-SO |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 1.5W |
| Transistor Type | - | - | 1 N-Channel |
| Drain to Source Voltage Vdss | - | - | 200V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 1.7A (Ta) |
| Rds On Max Id Vgs | - | - | 240 mOhm @ 2.2A, 10V |
| Vgs th Max Id | - | - | 4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 18nC @ 10V |
| Pd Power Dissipation | - | - | 1.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 1.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 240 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 15 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4464DY-T1-E3 | MOSFET 200V Vds 20V Vgs SO-8 | |
| SI4464DY-T1-GE3 | MOSFET 200V Vds 20V Vgs SO-8 | ||
| SI4464DY-T1-E3-CUT TAPE | Neu und Original | ||
| SI4464DY-T1 | Neu und Original | ||
Vishay |
SI4464DY-T1-E3 | MOSFET N-CH 200V 1.7A 8-SOIC | |
| SI4464DY-T1-GE3 | MOSFET N-CH 200V 1.7A 8-SOIC |