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| PartNumber | SI4501BDY-T1-GE3 | SI4501BDY | SI4501BDY-T1-E3 |
| Description | MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V, 8 V | - | - |
| Id Continuous Drain Current | 9.5 A, 6.4 A | - | - |
| Rds On Drain Source Resistance | 17 mOhms, 27 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV, 450 mV | - | - |
| Vgs Gate Source Voltage | 20 V, 8 V | - | - |
| Qg Gate Charge | 25 nC, 42 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 4.5 W, 3.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI4 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 29 S, 24 S | - | - |
| Fall Time | 10 ns, 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns, 18 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns, 34 ns | - | - |
| Typical Turn On Delay Time | 16 ns, 22 ns | - | - |
| Part # Aliases | SI4501BDY-GE3 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4501BDY-T1-GE3 | MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR | |
| SI4501BDY | Neu und Original | ||
| SI4501BDY-T1-E3 | Neu und Original | ||
Vishay |
SI4501BDY-T1-GE3 | MOSFET N/P-CH 30V/8V 8SOIC |