SI4501BDY-T1-GE3

SI4501BDY-T1-GE3
Mfr. #:
SI4501BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4501BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V, 8 V
Id - Kontinuierlicher Drainstrom:
9.5 A, 6.4 A
Rds On - Drain-Source-Widerstand:
17 mOhms, 27 mOhms
Vgs th - Gate-Source-Schwellenspannung:
800 mV, 450 mV
Vgs - Gate-Source-Spannung:
20 V, 8 V
Qg - Gate-Ladung:
25 nC, 42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
4.5 W, 3.1 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Transistortyp:
1 N-Channel, 1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
29 S, 24 S
Abfallzeit:
10 ns, 14 ns
Produktart:
MOSFET
Anstiegszeit:
55 ns, 18 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns, 34 ns
Typische Einschaltverzögerungszeit:
16 ns, 22 ns
Teil # Aliase:
SI4501BDY-GE3
Gewichtseinheit:
0.019048 oz
Tags
SI4501B, SI4501, SI450, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 6.4 A; 12 A; 8V; 30V; 8-Pin SOIC
***ical
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, NP CH, W/D, 30V/8V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:4.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:12A; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-8V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.0135ohm; On Resistance Rds(on), P Channel:0.021ohm; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:4.5W
Teil # Mfg. Beschreibung Aktie Preis
SI4501BDY-T1-GE3
DISTI # V72:2272_09216524
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
RoHS: Compliant
2262
  • 1000:$0.2460
  • 500:$0.2753
  • 250:$0.3234
  • 100:$0.3345
  • 25:$0.4116
  • 10:$0.4133
  • 1:$0.4862
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1756In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1756In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.2552
SI4501BDY-T1-GE3
DISTI # 30697489
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
RoHS: Compliant
2262
  • 1000:$0.2460
  • 500:$0.2753
  • 250:$0.3234
  • 100:$0.3345
  • 29:$0.4116
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R (Alt: SI4501BDY-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1:€0.4119
  • 10:€0.2809
  • 25:€0.2419
  • 50:€0.2229
  • 100:€0.2149
  • 500:€0.2109
  • 1000:€0.2079
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R - Tape and Reel (Alt: SI4501BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.2319
  • 5000:$0.2249
  • 10000:$0.2159
  • 15000:$0.2099
  • 25000:$0.2049
SI4501BDY-T1-GE3
DISTI # 67X6866
Vishay IntertechnologiesMOSFET Transistor, N and P Channel, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV0
  • 1:$0.2760
  • 2500:$0.2630
  • 5000:$0.2450
  • 7500:$0.2280
SI4501BDY-T1-GE3
DISTI # 70616179
Vishay SiliconixSI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor,6.4 A,12 A,8V,30V,8-Pin SOIC
RoHS: Compliant
0
  • 100:$0.4700
  • 500:$0.4200
  • 1500:$0.3700
  • 2500:$0.3400
SI4501BDY-T1-GE3
DISTI # 78-SI4501BDY-T1-GE3
Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
RoHS: Compliant
1545
  • 1:$0.6400
  • 10:$0.5110
  • 100:$0.3880
  • 500:$0.3200
  • 1000:$0.2680
  • 2500:$0.2670
SI4501BDY-T1-GE3
DISTI # 8123227P
Vishay IntertechnologiesTRANS MOSFET N/P-CH 30V/8V 9A/6.4A, RL1680
  • 100:£0.3060
  • 500:£0.2520
  • 1500:£0.2140
  • 2500:£0.2090
SI4501BDY-T1-GE3Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SO-8 N&P PAIRAmericas -
    SI4501BDY-T1-GE3
    DISTI # C1S803605378402
    Vishay IntertechnologiesMOSFETs2262
    • 250:$0.3234
    • 100:$0.3345
    • 25:$0.4116
    • 10:$0.4134
    SI4501BDY-T1-GE3
    DISTI # 2056722
    Vishay IntertechnologiesMOSFET, NP CH, W/D, 30V/8V, SO8
    RoHS: Compliant
    0
    • 5:£0.4470
    • 25:£0.3870
    • 100:£0.3270
    • 250:£0.2980
    • 500:£0.2690
    Bild Teil # Beschreibung
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    OMO.#: OMO-AD8629ARMZ-REEL

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    Thick Film Resistors - SMD 0805 10Kohm 5% Anti Surge AEC-Q200
    KTR10EZPF5601

    Mfr.#: KTR10EZPF5601

    OMO.#: OMO-KTR10EZPF5601

    Thick Film Resistors - SMD 0805 5.6K 1% High VoltageAEC-Q200
    CC0603KRX5R8BB105

    Mfr.#: CC0603KRX5R8BB105

    OMO.#: OMO-CC0603KRX5R8BB105

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 25V X5R 10%
    AD8629ARMZ-REEL

    Mfr.#: AD8629ARMZ-REEL

    OMO.#: OMO-AD8629ARMZ-REEL-ANALOG-DEVICES-INC-ADI

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    KTR10EZPF5601

    Mfr.#: KTR10EZPF5601

    OMO.#: OMO-KTR10EZPF5601-ROHM-SEMI

    RES SMD 5.6K OHM 1% 1/8W 0805
    CRCW020110K0FKED

    Mfr.#: CRCW020110K0FKED

    OMO.#: OMO-CRCW020110K0FKED-VISHAY-DALE

    Thick Film Resistors - SMD 1/20watt 10Kohms 1% 100ppm
    ESR10EZPJ102

    Mfr.#: ESR10EZPJ102

    OMO.#: OMO-ESR10EZPJ102-ROHM-SEMI

    RES SMD 1K OHM 5% 0.4W 0805
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SI4501BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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