PartNumber | SI4804BDY-T1-E3 | SI4804BDT-T1-E3 | SI4804BDY-T1 |
Description | IGBT Transistors MOSFET 30V 7.5A 2W | ||
Manufacturer | Vishay Siliconix | - | - |
Product Category | FETs - Arrays | - | - |
Series | TrenchFETR | - | - |
Packaging | Digi-ReelR | - | - |
Part Aliases | SI4804BDY-E3 | - | - |
Unit Weight | 0.006596 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 2 Channel | - | - |
Supplier Device Package | 8-SO | - | - |
Configuration | Dual | - | - |
FET Type | 2 N-Channel (Dual) | - | - |
Power Max | 1.1W | - | - |
Transistor Type | 2 N-Channel | - | - |
Drain to Source Voltage Vdss | 30V | - | - |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | Logic Level Gate | - | - |
Current Continuous Drain Id 25°C | 5.7A | - | - |
Rds On Max Id Vgs | 22 mOhm @ 7.5A, 10V | - | - |
Vgs th Max Id | 3V @ 250μA | - | - |
Gate Charge Qg Vgs | 11nC @ 4.5V | - | - |
Pd Power Dissipation | 1.1 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 10 ns | - | - |
Rise Time | 10 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 5.7 A | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Rds On Drain Source Resistance | 22 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 19 ns | - | - |
Typical Turn On Delay Time | 9 ns | - | - |
Channel Mode | Enhancement | - | - |