SI4804BD

SI4804BDY-T1-E3 vs SI4804BDT-T1-E3 vs SI4804BDY-T1

 
PartNumberSI4804BDY-T1-E3SI4804BDT-T1-E3SI4804BDY-T1
DescriptionIGBT Transistors MOSFET 30V 7.5A 2W
ManufacturerVishay Siliconix--
Product CategoryFETs - Arrays--
SeriesTrenchFETR--
PackagingDigi-ReelR--
Part AliasesSI4804BDY-E3--
Unit Weight0.006596 oz--
Mounting StyleSMD/SMT--
Package Case8-SOIC (0.154", 3.90mm Width)--
TechnologySi--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Number of Channels2 Channel--
Supplier Device Package8-SO--
ConfigurationDual--
FET Type2 N-Channel (Dual)--
Power Max1.1W--
Transistor Type2 N-Channel--
Drain to Source Voltage Vdss30V--
Input Capacitance Ciss Vds---
FET FeatureLogic Level Gate--
Current Continuous Drain Id 25°C5.7A--
Rds On Max Id Vgs22 mOhm @ 7.5A, 10V--
Vgs th Max Id3V @ 250μA--
Gate Charge Qg Vgs11nC @ 4.5V--
Pd Power Dissipation1.1 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Fall Time10 ns--
Rise Time10 ns--
Vgs Gate Source Voltage20 V--
Id Continuous Drain Current5.7 A--
Vds Drain Source Breakdown Voltage30 V--
Rds On Drain Source Resistance22 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time9 ns--
Channel ModeEnhancement--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4804BDY-T1-GE3 MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
Vishay
Vishay
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SI4804BDT-T1-E3 Neu und Original
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SI4804BDY-T1-E3 (PB) Neu und Original
SI4804BDY-T1-E3 GE3 Neu und Original
SI4804BDY-T1-E3. Neu und Original
SI4804BDY Neu und Original
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