SI4830C

SI4830CDY-T1-E3 vs SI4830CDY vs SI4830CDY-T1

 
PartNumberSI4830CDY-T1-E3SI4830CDYSI4830CDY-T1
DescriptionRF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
ManufacturerVishay Siliconix--
Product CategoryIC Chips--
SeriesLITTLE FOOTR--
PackagingTape & Reel (TR)--
Part AliasesSI4830CDY-E3--
Unit Weight0.017870 oz--
Mounting StyleSMD/SMT--
Package Case8-SOIC (0.154", 3.90mm Width)--
TechnologySi--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Number of Channels2 Channel--
Supplier Device Package8-SO--
ConfigurationDual with Schottky Diode--
FET Type2 N-Channel (Half Bridge)--
Power Max2.9W--
Transistor Type2 N-Channel--
Drain to Source Voltage Vdss30V--
Input Capacitance Ciss Vds950pF @ 15V--
FET FeatureLogic Level Gate--
Current Continuous Drain Id 25°C8A--
Rds On Max Id Vgs20 mOhm @ 8A, 10V--
Vgs th Max Id3V @ 1mA--
Gate Charge Qg Vgs25nC @ 10V--
Pd Power Dissipation2 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Fall Time12 ns--
Rise Time12 ns--
Vgs Gate Source Voltage20 V--
Id Continuous Drain Current5.7 A--
Vds Drain Source Breakdown Voltage30 V--
Rds On Drain Source Resistance20 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time18 ns 18 ns--
Typical Turn On Delay Time17 ns--
Channel ModeEnhancement--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4830CDY-T1-GE3 MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Vishay
Vishay
SI4830CDY-T1-E3 RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
SI4830CDY-T1-GE3 MOSFET 2N-CH 30V 8A 8-SOIC
SI4830CDY Neu und Original
SI4830CDY-T1 Neu und Original
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