PartNumber | SI4830CDY-T1-E3 | SI4830CDY | SI4830CDY-T1 |
Description | RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V | ||
Manufacturer | Vishay Siliconix | - | - |
Product Category | IC Chips | - | - |
Series | LITTLE FOOTR | - | - |
Packaging | Tape & Reel (TR) | - | - |
Part Aliases | SI4830CDY-E3 | - | - |
Unit Weight | 0.017870 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 2 Channel | - | - |
Supplier Device Package | 8-SO | - | - |
Configuration | Dual with Schottky Diode | - | - |
FET Type | 2 N-Channel (Half Bridge) | - | - |
Power Max | 2.9W | - | - |
Transistor Type | 2 N-Channel | - | - |
Drain to Source Voltage Vdss | 30V | - | - |
Input Capacitance Ciss Vds | 950pF @ 15V | - | - |
FET Feature | Logic Level Gate | - | - |
Current Continuous Drain Id 25°C | 8A | - | - |
Rds On Max Id Vgs | 20 mOhm @ 8A, 10V | - | - |
Vgs th Max Id | 3V @ 1mA | - | - |
Gate Charge Qg Vgs | 25nC @ 10V | - | - |
Pd Power Dissipation | 2 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 12 ns | - | - |
Rise Time | 12 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 5.7 A | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Rds On Drain Source Resistance | 20 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 18 ns 18 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Channel Mode | Enhancement | - | - |