PartNumber | SI4834CDY-T1-GE3 | SI4834CDY-T1-E3 | SI4834CDY |
Description | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V | |
Manufacturer | Vishay | Vishay Siliconix | VISHAY |
Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Tape & Reel (TR) | - |
Series | SI4 | TrenchFETR | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI4834CDY-GE3 | - | - |
Unit Weight | 0.017870 oz | 0.006596 oz | - |
Part Aliases | - | SI4834CDY-E3 | - |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 2 Channel | - |
Supplier Device Package | - | 8-SO | - |
Configuration | - | Dual with Schottky Diode | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 2.9W | - |
Transistor Type | - | 2 N-Channel | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 950pF @ 15V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 8A | - |
Rds On Max Id Vgs | - | 20 mOhm @ 8A, 10V | - |
Vgs th Max Id | - | 3V @ 1mA | - |
Gate Charge Qg Vgs | - | 25nC @ 10V | - |
Pd Power Dissipation | - | 2 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 10 ns | - |
Rise Time | - | 12 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 7.5 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 20 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 19 ns 18 ns | - |
Typical Turn On Delay Time | - | 17 ns | - |
Channel Mode | - | Enhancement | - |