SI59

SI5948DU-T1-GE3 vs SI5975DC-T1-E3 vs SI5975DC-T1-GE3

 
PartNumberSI5948DU-T1-GE3SI5975DC-T1-E3SI5975DC-T1-GE3
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK ChipFETMOSFET 2P-CH 12V 3.1A CHIPFETMOSFET 2P-CH 12V 3.1A CHIPFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-ChipFET-Dual-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance82 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation7 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.75 mm--
Length3 mm--
SeriesSI5--
Transistor Type2 N-Channel--
Width1.8 mm--
BrandVishay / Siliconix--
Forward Transconductance Min11 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time41 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9 ns--
Typical Turn On Delay Time11 ns--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI5948DU-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK ChipFET
SI5980DU-T1-GE3 MOSFET RECOMMENDED ALT 78-SIS990DN-T1-GE3
SI5999EDU-T1-GE3 MOSFET -20V Vds 12V Vgs PowerPAK ChipFET
Vishay
Vishay
SI5980DU-T1-GE3 IGBT Transistors MOSFET 100V 2.5A 7.8W .567Ohms @ 10V
SI5948DU-T1-GE3 MOSFET 2 N-CH 40V 6A POWERPAK
SI5975DC-T1-E3 MOSFET 2P-CH 12V 3.1A CHIPFET
SI5997DU-T1-GE3 MOSFET 2P-CH 30V 6A PPAK CHIPFET
SI5999EDU-T1-GE3 MOSFET 2P-CH 20V 6A POWERPAK
SI5975DC-T1-GE3 MOSFET 2P-CH 12V 3.1A CHIPFET
SI5948DU Neu und Original
SI5953DDC-T1-GE3 Neu und Original
SI5975DC-T1 MOSFET RECOMMENDED ALT 78-SI5935CDC-T1-GE3
SI5997DU Neu und Original
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