 | | | |
| PartNumber | SI7923DN-T1-E3 | SI7922DN-T1-E3 | SI7922DN-T1-GE3 |
| Description | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | SI7 | SI7 | SI7 |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI7923DN-E3 | SI7922DN-T1 | SI7922DN-GE3 |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 2.5 A | - |
| Rds On Drain Source Resistance | - | 195 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 8 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2.6 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 2 N-Channel | - |
| Forward Transconductance Min | - | 5.3 S | - |
| Fall Time | - | 11 ns | - |
| Rise Time | - | 11 ns | - |
| Typical Turn Off Delay Time | - | 8 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7923DN-T1-E3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 | |
| SI7923DN-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SI7922DN-T1-E3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | ||
| SI7925DN-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7913DN-T1-GE3 | ||
| SI7922DN-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | ||
Vishay |
SI7922DN-T1-GE3 | IGBT Transistors MOSFET Dual N-Ch 100V 195 mohm @ 4.5V | |
| SI7922DN-T1-E3 | IGBT Transistors MOSFET DUAL N-CH 100V (D-S) | ||
| SI7923DN-T1-GE3 | RF Bipolar Transistors MOSFET 30V 6.4A 2.8W 47mohm @ 10V | ||
| SI7923DN-T1-E3 | MOSFET 2P-CH 30V 4.3A 1212-8 | ||
| SI7925DN-T1-E3 | MOSFET 2P-CH 12V 4.8A 1212-8 | ||
| SI7925DN-T1-GE3 | MOSFET 2P-CH 12V 4.8A 1212-8 | ||
| SI7922DN-T1-E3-CUT TAPE | Neu und Original | ||
| SI7923DN-T1-E3-CUT TAPE | Neu und Original | ||
| SI7922 | Neu und Original | ||
| SI7922DN | MOSFET, DUAL, NN, POWERPAK | ||
| SI7922DN-T1 | MOSFET Transistor, Matched Pair, N-Channel, LLCC | ||
| SI7923DN | Neu und Original | ||
| SI7923DN-T1-E3CT-ND | Neu und Original | ||
| SI7925DN | Neu und Original |