PartNumber | SI7923DN-T1-E3 | SI7922DN-T1-E3 | SI7922DN-T1-GE3 |
Description | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | 1.04 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | SI7 | SI7 | SI7 |
Width | 3.3 mm | 3.3 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI7923DN-E3 | SI7922DN-T1 | SI7922DN-GE3 |
Number of Channels | - | 2 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 2.5 A | - |
Rds On Drain Source Resistance | - | 195 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 8 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 2.6 W | - |
Configuration | - | Dual | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 2 N-Channel | - |
Forward Transconductance Min | - | 5.3 S | - |
Fall Time | - | 11 ns | - |
Rise Time | - | 11 ns | - |
Typical Turn Off Delay Time | - | 8 ns | - |
Typical Turn On Delay Time | - | 7 ns | - |