PartNumber | SI9933CDY-T1-GE3 | SI9933CDY-T1-E3 | SI9933BDY-T1-E3 |
Description | MOSFET -20V Vds 12V Vgs SO-8 | MOSFET -20V Vds 12V Vgs SO-8 | MOSFET 2P-CH 20V 3.6A 8-SOIC |
Manufacturer | Vishay | Vishay | Vishay Siliconix |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | E | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 4 A | 4 A | - |
Rds On Drain Source Resistance | 58 mOhms | 58 mOhms | - |
Vgs th Gate Source Threshold Voltage | 600 mV | 600 mV | - |
Vgs Gate Source Voltage | 4.5 V | 12 V | - |
Qg Gate Charge | 17 nC | 26 nC | - |
Minimum Operating Temperature | - 50 C | - 50 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3.1 W | 3.1 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Digi-ReelR |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | SI9 | SI9 | - |
Transistor Type | 2 P-Channel | 2 P-Channel | - |
Width | 3.9 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 11 S | 11 S | - |
Fall Time | 13 ns | 13 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 50 ns | 50 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 29 ns | 29 ns | - |
Typical Turn On Delay Time | 21 ns | 21 ns | - |
Part # Aliases | SI9933CDY-GE3 | SI9933CDY-E3 | - |
Unit Weight | 0.006596 oz | 0.006596 oz | - |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 1.1W |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 3.6A |
Rds On Max Id Vgs | - | - | 60 mOhm @ 4.7A, 4.5V |
Vgs th Max Id | - | - | 1.4V @ 250μA |
Gate Charge Qg Vgs | - | - | 9nC @ 4.5V |