SI9933CDY-T1-E3

Mfr. #:: SI9933CDY-T1-E3
Hersteller:: Vishay
Beschreibung:: IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI9933CDY-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI9933CDY-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Arrays

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI9933CDY-E3

Gewichtseinheit: 0.006596 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -50°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Dual

FET-Typ: 2 P-Channel (Dual)

Leistung max: 3.1W

Transistor-Typ: 2 P-Channel

Drain-zu-Source-Spannung-Vdss: 20V

Eingangskapazität-Ciss-Vds: 665pF @ 10V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.8A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Gate-Lade-Qg-Vgs: 26nC @ 10V

Pd-Verlustleistung: 2 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 50 C

Abfallzeit: 13 ns

Anstiegszeit: 50 ns

Vgs-Gate-Source-Spannung: 12 V

ID-Dauer-Drain-Strom: 4 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Rds-On-Drain-Source-Widerstand: 58 mOhms

Transistor-Polarität: P-Kanal

Typische-Ausschaltverzögerungszeit: 29 ns

Typische-Einschaltverzögerungszeit: 21 ns

Kanal-Modus: Erweiterung

Tags: SI9933CDY-T, SI9933CD, SI9933C, SI9933, SI993, SI99, SI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9933CDY-T1-E3 Beschreibung

***ure Electronics: Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC

***nell: MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C

SI9933CDY-T1-E3 Mehr Informationen

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI9933CDY-T1-E3 DISTI # V72:2272_09216526	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093 1:$0.4844
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.2552
SI9933CDY-T1-E3 DISTI # 25790123	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 31:$0.4045
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9933CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R (Alt: SI9933CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC - Product that comes on tape, but is not reeled (Alt: 16P3887) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -20V, SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes	2222	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200 1000:$0.2560
SI9933CDY-T1-E3 DISTI # 781-SI9933CDY-E3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant	3592	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2560 2500:$0.2320
SI9933CDY-T1-E3 DISTI # C1S803603830148	Vishay Intertechnologies	MOSFETs RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1894	1:$1.0200 10:$0.8090 100:$0.6150 500:$0.5070 1000:$0.4250
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1840	5:£0.4410 25:£0.2690 100:£0.2670 250:£0.2550 500:£0.2110

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
	Mfr.#: SI9933CDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9933CDY-T1-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SI9933C OMO.#: OMO-SI9933C-1190	Neu und Original
	Mfr.#: SI9933CDY OMO.#: OMO-SI9933CDY-1190	Neu und Original
	Mfr.#: SI9933CDY-T1 OMO.#: OMO-SI9933CDY-T1-1190	Neu und Original
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3-VISHAY	MOSFET 2P-CH 20V 4A 8-SOIC
	Mfr.#: SI9933CY-T1 OMO.#: OMO-SI9933CY-T1-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von SI9933CDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,31 $~~; ~~0,31 $~~

10: ~~0,29 $~~; ~~2,92 $~~

100: ~~0,28 $~~; ~~27,66 $~~

500: ~~0,26 $~~; ~~130,60 $~~

1000: ~~0,25 $~~; ~~245,90 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI9933CDY-T 4
SI9933CD 5
SI9933C 7
SI9933 37
SI993 87
SI99 313
SI9 1126

SI9933CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes