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| PartNumber | SI9933CDY-T1-GE3 | SI9933CDY-T1-E3 |
| Description | MOSFET -20V Vds 12V Vgs SO-8 | MOSFET -20V Vds 12V Vgs SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 4 A | 4 A |
| Rds On Drain Source Resistance | 58 mOhms | 58 mOhms |
| Vgs th Gate Source Threshold Voltage | 600 mV | 600 mV |
| Vgs Gate Source Voltage | 4.5 V | 12 V |
| Qg Gate Charge | 17 nC | 26 nC |
| Minimum Operating Temperature | - 50 C | - 50 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3.1 W | 3.1 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.75 mm | - |
| Length | 4.9 mm | - |
| Series | SI9 | SI9 |
| Transistor Type | 2 P-Channel | 2 P-Channel |
| Width | 3.9 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 11 S | 11 S |
| Fall Time | 13 ns | 13 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 50 ns | 50 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 29 ns |
| Typical Turn On Delay Time | 21 ns | 21 ns |
| Part # Aliases | SI9933CDY-GE3 | SI9933CDY-E3 |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI9933CDY-T1-GE3 | MOSFET -20V Vds 12V Vgs SO-8 | |
| SI9933CDY-T1-E3 | MOSFET -20V Vds 12V Vgs SO-8 | ||
Vishay |
SI9933CDY-T1-E3 | IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V | |
| SI9933CDY-T1-GE3 | MOSFET 2P-CH 20V 4A 8-SOIC | ||
| SI9933CDY-T1-GE3-CUT TAPE | Neu und Original | ||
| SI9933CDY-T1 | Neu und Original |