PartNumber | SIA456DJ-T1-GE3 | SIA456DJ-T3-GE3 | SIA450DJ-T1-GE3 |
Description | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | MOSFET RECOMMENDED ALT 781-SIA456DJ-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SC-70-6 | SC-70-6 | PowerPAK-SC70-6 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 2.6 A | 2.6 A | - |
Rds On Drain Source Resistance | 1.38 Ohms | 1.38 Ohms | - |
Vgs th Gate Source Threshold Voltage | 600 mV | 0.6 V | - |
Vgs Gate Source Voltage | 4.5 V | 16 V | - |
Qg Gate Charge | 5 nC | 14.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 19 W | 19 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SIA | SIA | SIA |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 5 S | 5 S | - |
Fall Time | 20 ns | 20 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 25 ns | - |
Factory Pack Quantity | 3000 | 5000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 30 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Part # Aliases | SIA456DJ-GE3 | - | SIA450DJ-GE3 |
Height | - | - | 0.75 mm |
Length | - | - | 2.05 mm |
Width | - | - | 2.05 mm |
Unit Weight | - | - | 0.001764 oz |