 | |  | |
| PartNumber | SIA462DJ-T1-GE3 | SIA461DJ-T1-GE3 | SIA465EDJ-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SC-70 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | MOSFET -20V Vds TrenchFET PowerPAK SC-70-6L |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET, PowerPAK | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SIA | SIA | SIA |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 6000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | SC-70-6 | PowerPAK-SC70-6 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 12 A | 12 A |
| Rds On Drain Source Resistance | - | 33 mOhms | 13.5 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | 500 mV |
| Vgs Gate Source Voltage | - | 4.5 V | 12 V |
| Qg Gate Charge | - | 18 nC | 72 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 17.9 W | 19 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 20 S | 29 S |
| Fall Time | - | 20 ns | 20 ns |
| Rise Time | - | 22 ns | 25 ns |
| Typical Turn Off Delay Time | - | 50 ns | 55 ns |
| Typical Turn On Delay Time | - | 20 ns | 25 ns |
| Part # Aliases | - | SIA461DJ-GE3 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA469DJ-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | |
| SIA466EDJ-T1-GE3 | MOSFET 20V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA468DJ-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA462DJ-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA461DJ-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA465EDJ-T1-GE3 | MOSFET -20V Vds TrenchFET PowerPAK SC-70-6L | ||
| SIA467EDJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA447DJ-T1-GE3 | ||
| SIA461DJ-T1-GE3-CUT TAPE | Neu und Original | ||
Vishay |
SIA467EDJ-T1-GE3 | MOSFET P-CH 12V 31A SC70-6 | |
| SIA461DJ-T1-GE3 | MOSFET P-CH 20V 12A SC70-6 | ||
| SIA462DJ-T1-GE3 | MOSFET N-CH 30V 12A SC-70-6L | ||
| SIA466EDJ-T1-GE3 | MOSFET N-CH 20V 25A SC-70-6 | ||
| SIA469DJ-T1-GE3 | MOSFET P-CHANNEL 30V 12A SC70-6 | ||
| SIA462DJ-T4-GE3 | MOSFET N-CH 30V SMD | ||
| SIA465EDJ-T1-GE3 | MOSFET P-CH 20V 12A SC70-6 | ||
| SIA468DJ-T1-GE3 | N-CHANNEL 30-V (D-S) MOSFET |