SIA811

SIA811ADJ-T1-GE3 vs SIA811ADJ-GE3 vs SIA811DJ

 
PartNumberSIA811ADJ-T1-GE3SIA811ADJ-GE3SIA811DJ
DescriptionMOSFET -20V Vds 8V Vgs PowerPAK SC-70
ManufacturerVishay-VISHAY
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SC70-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance116 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation6.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameLITTLE FOOT, PowerPAK--
PackagingReel--
SeriesSIA--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min7 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSIA811ADJ-GE3--
Unit Weight0.000988 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA811ADJ-T1-GE3 MOSFET -20V Vds 8V Vgs PowerPAK SC-70
SIA811DJ-T1-GE3 MOSFET RECOMMENDED ALT 781-SIA811ADJ-GE3
SIA811DJ-T1-E3 MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
SIA811ADJ-GE3 Neu und Original
SIA811DJ Neu und Original
SIA811DJ-T1 Neu und Original
Vishay
Vishay
SIA811ADJ-T1-GE3 MOSFET P-CH 20V 4.5A PPAK SC70-6
SIA811DJ-T1-E3 MOSFET P-CH 20V 4.5A SC70-6
SIA811DJ-T1-GE3 MOSFET P-CH 20V 4.5A SC70-6
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