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| PartNumber | SIA911ADJ-T1-GE3 | SIA910EDJ-T1-GE3 | SIA911DJ-T1-E3 |
| Description | MOSFET 20V 4.5A 6.5W | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | MOSFET RECOMMENDED ALT 78-SIA923AEDJ-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SIA | SIA | SIA |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIA911ADJ-GE3 | SIA910EDJ-GE3 | SIA911DJ-E3 |
| Unit Weight | 0.000988 oz | 0.000988 oz | 0.000988 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | PowerPAK-SC70-6 | PowerPAK-SC70-6 |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 4.5 A | - |
| Rds On Drain Source Resistance | - | 28 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Qg Gate Charge | - | 16 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 7.8 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 0.75 mm | 0.75 mm |
| Length | - | 2.05 mm | 2.05 mm |
| Transistor Type | - | 2 N-Channel | - |
| Width | - | 2.05 mm | 2.05 mm |
| Forward Transconductance Min | - | 23 S | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 25 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA911ADJ-T1-GE3 | MOSFET 20V 4.5A 6.5W | |
| SIA910EDJ-T1-GE3 | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA918EDJ-T1-GE3 | MOSFET 30V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA913ADJ-T1-GE3 | MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V | ||
| SIA911EDJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIA911ADJ-GE3 | ||
| SIA911DJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA923AEDJ-T1-GE3 | ||
| SIA917DJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIA921EDJ-GE3 | ||
| SIA912DJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIA910EDJ-T1-GE3 | ||
| SIA911DJ-T1-E3 | MOSFET RECOMMENDED ALT 78-SIA923AEDJ-T1-GE3 | ||
| SIA910EDJ-T1-GE3-CUT TAPE | Neu und Original | ||
| SIA910EDJT1GE3 | Neu und Original | ||
| SIA911ADJ-T5 | Neu und Original | ||
| SIA911DJ | Neu und Original | ||
| SIA911DJ-T5-GE3 | Neu und Original | ||
| SIA912 | Neu und Original | ||
| SIA912DJT1GE3 | Neu und Original | ||
| SIA9130J-T1-E3 | Neu und Original | ||
| SIA913ADJ | Neu und Original | ||
| SIA913DJ-T1-E3 | MOSFET RECOMMENDED ALT 781-SIA906EDJ-GE3 | ||
| SIA914DJ-T1-GE3CT | Neu und Original | ||
| SIA914DJT1GE3 | Neu und Original | ||
Vishay |
SIA910EDJ-T1-GE3 | MOSFET 2N-CH 12V 4.5A SC-70-6 | |
| SIA911ADJ-T1-GE3 | MOSFET 2P-CH 20V 4.5A SC70-6 | ||
| SIA911DJ-T1-E3 | MOSFET 2P-CH 20V 4.5A SC70-6 | ||
| SIA911DJ-T1-GE3 | MOSFET 2P-CH 20V 4.5A SC70-6 | ||
| SIA911EDJ-T1-GE3 | MOSFET 2P-CH 20V 4.5A SC70-6 | ||
| SIA912DJ-T1-GE3 | MOSFET 2N-CH 12V 4.5A SC70-6 | ||
| SIA913ADJ-T1-GE3 | MOSFET 2P-CH 12V 4.5A SC70-6 | ||
| SIA913DJ-T1-GE3 | MOSFET 2P-CH 12V 4.5A SC70-6 | ||
| SIA914ADJ-T1-GE3 | MOSFET 2N-CH 20V 4.5A SC70-6L | ||
| SIA914DJ-T1-E3 | MOSFET 2N-CH 20V 4.5A SC70-6 | ||
| SIA914DJ-T1-GE3 | MOSFET 2N-CH 20V 4.5A SC70-6 | ||
| SIA915DJ-T1-GE3 | MOSFET 2P-CH 30V 4.5A SC-70-6L | ||
| SIA917DJ-T1-GE3 | MOSFET 2P-CH 20V 4.5A SC70-6 | ||
| SIA918EDJ-T1-GE3 | MOSFET 2N-CH 30V POWERPAK SC70-6 | ||
| SIA915DJ-T4-GE3 | MOSFET 2P-CH 30V SC70-6 |