SIA912DJ-T1-GE3

SIA912DJ-T1-GE3
Mfr. #:
SIA912DJ-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SIA910EDJ-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA912DJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA912DJ-T1-GE3 DatasheetSIA912DJ-T1-GE3 Datasheet (P4-P6)SIA912DJ-T1-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SC70-6
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2.05 mm
Serie:
SIA
Breite:
2.05 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIA912DJ-GE3
Gewichtseinheit:
0.000988 oz
Tags
SIA912, SIA91, SIA9, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R
***nell
DUAL N CHANNEL MOSFET, 12V, SC-70
*** Electronics
MOSFET 12V 4.5A 6.5W 40mohm @ 4.5V
***ronik
N+N-MOS-FET 4,5 A12V PP-SC70-6 RoHSconf
***ark
Transistor; Continuous Drain Current, Id:4500mA; Drain Source Voltage, Vds:12V; On Resistance, Rds(on):0.063ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SIA912DJ-T1-GE3
DISTI # SIA912DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIA912DJ-T1-GE3
    DISTI # SIA912DJ-T1-GE3CT-ND
    Vishay SiliconixMOSFET 2N-CH 12V 4.5A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SIA912DJ-T1-GE3
      DISTI # SIA912DJ-T1-GE3DKR-ND
      Vishay SiliconixMOSFET 2N-CH 12V 4.5A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SIA912DJ-T1-GE3
        DISTI # 781-SIA912DJ-T1-GE3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SIA910EDJ-T1-GE3
        RoHS: Compliant
        0
          Bild Teil # Beschreibung
          SIA912DJ-T1-GE3

          Mfr.#: SIA912DJ-T1-GE3

          OMO.#: OMO-SIA912DJ-T1-GE3

          MOSFET RECOMMENDED ALT 781-SIA910EDJ-T1-GE3
          SIA912DJ-T1-GE3

          Mfr.#: SIA912DJ-T1-GE3

          OMO.#: OMO-SIA912DJ-T1-GE3-VISHAY

          MOSFET 2N-CH 12V 4.5A SC70-6
          SIA912DJT1GE3

          Mfr.#: SIA912DJT1GE3

          OMO.#: OMO-SIA912DJT1GE3-1190

          Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2000
          Menge eingeben:
          Der aktuelle Preis von SIA912DJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Beginnen mit
          Neueste Produkte
          Top