SIA914DJ-T

SIA914DJ-T1-E3 vs SIA914DJ-T1-GE3 vs SIA914DJ-T1-GE3CT

 
PartNumberSIA914DJ-T1-E3SIA914DJ-T1-GE3SIA914DJ-T1-GE3CT
DescriptionMOSFET 2N-CH 20V 4.5A SC70-6MOSFET 2N-CH 20V 4.5A SC70-6
Manufacturer-Vishay Siliconix-
Product Category-FETs - Arrays-
Series-TrenchFETR-
Packaging-Digi-ReelR-
Package Case-PowerPAKR SC-70-6 Dual-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PowerPAKR SC-70-6 Dual-
FET Type-2 N-Channel (Dual)-
Power Max-6.5W-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-400pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-4.5A-
Rds On Max Id Vgs-53 mOhm @ 3.7A, 4.5V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs-11.5nC @ 8V-
Hersteller Teil # Beschreibung RFQ
Vishay
Vishay
SIA914DJ-T1-E3 MOSFET 2N-CH 20V 4.5A SC70-6
SIA914DJ-T1-GE3 MOSFET 2N-CH 20V 4.5A SC70-6
SIA914DJ-T1-GE3CT Neu und Original
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