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| PartNumber | SIHB22N60S-E3 | SIHB22N60S-GE3 | SIHB22N60SE3 |
| Description | IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK | MOSFET N-CH 650V TO263 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Vishay / Siliconix | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | E | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 227 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 59 ns | - | - |
| Rise Time | 68 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 21 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 77 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Qg Gate Charge | 75 nC | - | - |
| Forward Transconductance Min | 9.4 S | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SIHB22N60S-E3 | IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK | ||
Vishay |
SIHB22N60S-GE3 | MOSFET N-CH 650V TO263 | |
| SIHB22N60SE3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB22N60SGE3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |