We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIHB22N60S-E3 DISTI # 74R0202 | Vishay Intertechnologies | MOSFET, N CHANNEL, 600V, 22A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):160mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3 RoHS Compliant: Yes | 0 | |
| SIHB22N60S-E3 DISTI # 781-SIHB22N60S-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 | |
| SIHB22N60SE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 200 | |
| SIHB22N60S-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | Americas - | |
| SIHB22N60S-E3 DISTI # 1794783 | Vishay Intertechnologies | MOSFET, N CH, 600V, 22A, TO263 RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SIHB22N60EF-GE3 OMO.#: OMO-SIHB22N60EF-GE3 |
MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode |
|
Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
|
Mfr.#: SIHB22N60ET5-GE3 OMO.#: OMO-SIHB22N60ET5-GE3 |
MOSFET 600V Vds E Series D2PAK TO-263 |
|
|
Mfr.#: SIHB22N60S-E3 OMO.#: OMO-SIHB22N60S-E3-126 |
IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK |
|
Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY |
MOSFET N-CHAN 600V |
|
Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3-VISHAY |
MOSFET N-CH 600V 20A D2PAK |
|
|
Mfr.#: SIHB22N60E OMO.#: OMO-SIHB22N60E-1190 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3-VISHAY |
MOSFET N-CH 600V 21A D2PAK |
|
|
Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY |
MOSFET N-CH 600V 21A TO263 |
|
|
Mfr.#: SIHB22N60S-GE3 OMO.#: OMO-SIHB22N60S-GE3-VISHAY |
MOSFET N-CH 650V TO263 |
