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SIHB22N60E-GE3

SIHB22N60E-GE3
Mfr. #:
SIHB22N60E-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 600V 21A D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB22N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHB22N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB22N60E-GE3
DISTI # V99:2348_09219018		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		718
  • 1000:$2.1720
  • 500:$2.3769
  • 250:$2.6410
  • 100:$2.7990
  • 10:$3.4110
  • 1:$4.4978
SIHB22N60E-GE3
DISTI # V36:1790_09219018		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000000:$2.0180
  • 500000:$2.0220
  • 100000:$2.6020
  • 10000:$3.7670
  • 1000:$3.9700
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		6945In Stock
  • 5000:$1.9891
  • 3000:$2.0668
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60E-GE3
DISTI # 31314797		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		718
  • 4:$4.4978
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK (Alt: SIHB22N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 1000
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 500:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.8900
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB22N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.7900
  • 10000:$1.7900
  • 2000:$1.8900
  • 4000:$1.8900
  • 1000:$1.9900
SIHB22N60E-GE3
DISTI # 83T7333		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:227W,No. of Pins:3 RoHS Compliant: Yes939
  • 2500:$2.2000
  • 1000:$2.3000
  • 500:$2.6700
  • 100:$3.0200
  • 50:$3.2100
  • 25:$3.4200
  • 10:$3.6100
  • 1:$4.2900
SIHB22N60E-E3
DISTI # 781-SIHB22N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		2025
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2000:$1.9600
SIHB22N60E-GE3
DISTI # 781-SIHB22N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		2740
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2000:$1.9600
SIHB22N60E-GE3
DISTI # 7689313P		Vishay IntertechnologiesMOSFET N-CHANNEL 600V 21A D2PAK, TU1653
  • 200:£1.8100
  • 100:£1.8500
  • 50:£1.9200
  • 10:£2.0900
SIHB22N60EGE3Vishay SiliconixPower Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		250
    SIHB22N60E-GE3
    DISTI # TMOSP10774    		Vishay IntertechnologiesMOSFET650V 180mOhm21A TO263
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$1.9200
    SIHB22N60E-GE3
    DISTI # XSKDRABV0051360    		Vishay Intertechnologies 
    RoHS: Compliant    		800 in Stock0 on Order
    • 800:$2.4400
    • 250:$2.6200
    SIHB22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas - 46200
    • 50:$2.6850
    • 100:$2.4360
    • 250:$2.2160
    • 500:$2.1440
    • 1000:$1.9360
    SIHB22N60E-GE3
    DISTI # 2079772    		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK3987
    • 500:£2.1000
    • 250:£2.5400
    • 100:£2.6000
    • 10:£3.1700
    • 1:£3.9700
    SIHB22N60E-GE3
    DISTI # 2079772    		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK
    RoHS: Compliant    		1939
    • 3000:$3.1300
    • 1000:$3.2800
    • 100:$4.5700
    • 25:$5.2700
    • 10:$5.5800
    • 1:$6.2100
    Bild Teil # Beschreibung
    SIHB22N60EF-GE3

    Mfr.#: SIHB22N60EF-GE3

    OMO.#: OMO-SIHB22N60EF-GE3

    		 MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60EL-GE3

    Mfr.#: SIHB22N60EL-GE3

    OMO.#: OMO-SIHB22N60EL-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N65E-GE3

    Mfr.#: SIHB22N65E-GE3

    OMO.#: OMO-SIHB22N65E-GE3

    		 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3

    		 MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3

    		 MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N65E-GE3

    Mfr.#: SIHB22N65E-GE3

    OMO.#: OMO-SIHB22N65E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3-VISHAY

    		 MOSFET N-CH 600V 20A D2PAK
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 21A D2PAK
    SIHB22N60SE3

    Mfr.#: SIHB22N60SE3

    OMO.#: OMO-SIHB22N60SE3-1190

    		 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SIHB22N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,68 $
    2,68 $
    10
    2,55 $
    25,51 $
    100
    2,42 $
    241,65 $
    500
    2,28 $
    1 141,15 $
    1000
    2,15 $
    2 148,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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