PartNumber | SIHF8N50D-E3 | SIHF8N50L-E3 | SIHF840LCS-GE3 |
Description | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | TO-220FP-3 | TO-220FP-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
Id Continuous Drain Current | 8.7 A | 8 A | 8 A |
Rds On Drain Source Resistance | 850 mOhms | 1 Ohms | 850 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V | 2 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 15 nC | 22 nC | 39 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 33 W | 40 W | 125 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | - |
Series | D | - | SIH |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 11 ns | 17 ns | 19 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | 35 ns | 25 ns |
Factory Pack Quantity | 50 | 50 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 17 ns | 23.6 ns | 27 ns |
Typical Turn On Delay Time | 13 ns | 17.3 ns | 12 ns |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
Height | - | 15.49 mm | - |
Length | - | 10.41 mm | - |
Width | - | 4.7 mm | - |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 4 S |