SIHF8

SIHF8N50D-E3 vs SIHF8N50L-E3 vs SIHF840LCS-GE3

 
PartNumberSIHF8N50D-E3SIHF8N50L-E3SIHF840LCS-GE3
DescriptionMOSFET 500V Vds 30V Vgs TO-220 FULLPAKMOSFET 500V Vds 30V Vgs TO-220 FULLPAKMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleSMD/SMT
Package / CaseTO-220FP-3TO-220FP-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V500 V
Id Continuous Drain Current8.7 A8 A8 A
Rds On Drain Source Resistance850 mOhms1 Ohms850 mOhms
Vgs th Gate Source Threshold Voltage5 V5 V2 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge15 nC22 nC39 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation33 W40 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTube-
SeriesD-SIH
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time11 ns17 ns19 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time16 ns35 ns25 ns
Factory Pack Quantity50501
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17 ns23.6 ns27 ns
Typical Turn On Delay Time13 ns17.3 ns12 ns
Unit Weight0.211644 oz0.211644 oz-
Height-15.49 mm-
Length-10.41 mm-
Width-4.7 mm-
Transistor Type--1 N-Channel
Forward Transconductance Min--4 S
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHF8N50D-E3 MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
SIHF8N50L-E3 MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
SIHF840LCS-GE3 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
Vishay
Vishay
SIHF8N50D-E3 MOSFET N-CH 500V 8.7A TO220 FLPK
SIHF8N50L-E3 MOSFET N-CH 500V 8A TO220FP
SIHF830 Neu und Original
SIHF830L Neu und Original
SIHF830S Neu und Original
SIHF8N50L Neu und Original
SIHF8N50L-E Neu und Original
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