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| PartNumber | SIHP10N40D-E3 | SIHP10N40D-GE3 |
| Description | MOSFET 400V Vds 30V Vgs TO-220AB | MOSFET 400V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 400 V | 400 V |
| Id Continuous Drain Current | 10 A | 10 A |
| Rds On Drain Source Resistance | 600 mOhms | 600 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 15 nC | 15 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 147 W | 147 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 15.49 mm | 15.49 mm |
| Length | 10.41 mm | 10.41 mm |
| Series | D | E |
| Width | 4.7 mm | 4.7 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 14 ns | 14 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 18 ns | 18 ns |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 18 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Tradename | - | TrenchFET |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP10N40D-E3 | MOSFET 400V Vds 30V Vgs TO-220AB | |
| SIHP10N40D-GE3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP10N40D-GE3 | IGBT Transistors MOSFET 450V 600mOhms@10V 10A N-Ch D-SRS | |
| SIHP10N40D-E3 | MOSFET N-CH 400V 10A TO-220AB | ||
| SIHP10N40D | Neu und Original |