 |  | |
| PartNumber | SIJ438DP-T1-GE3 | SIJ438ADP-T1-GE3 |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Tradename | TrenchFET | - |
| Packaging | Reel | Reel |
| Series | SIJ | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.004233 oz | - |
| Mounting Style | - | SMD/SMT |
| Package / Case | - | PowerPAK SO-8 |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 40 V |
| Id Continuous Drain Current | - | 45.3 A |
| Rds On Drain Source Resistance | - | 1.35 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V |
| Vgs Gate Source Voltage | - | 20 V, - 16 V |
| Qg Gate Charge | - | 162 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 69.4 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Forward Transconductance Min | - | 130 S |
| Fall Time | - | 8 ns |
| Rise Time | - | 8 ns |
| Typical Turn Off Delay Time | - | 51 ns |
| Typical Turn On Delay Time | - | 17 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIJ438DP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | |
| SIJ438ADP-T1-GE3 | MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L | ||
Vishay |
SIJ438ADP-T1-GE3 | MOSFET N-CHAN 40-V POWERPAK SO-8 | |
| SIJ438DP-T1-GE3 | MOSFET N-CH 40V 80A PPAK SO-8L | ||
| SIJ438DP | Neu und Original | ||
| SIJ438DPT1GE3 | Power Field-Effect Transisto |