PartNumber | SIJA54DP-T1-GE3 | SIJA52DP-T1-GE3 | SIJA52ADP-T1-GE3 |
Description | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIJ | SIJ | SIJ |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.004233 oz | 0.017870 oz | - |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-5 |
Height | - | 1.04 mm | - |
Length | - | 6.15 mm | - |
Width | - | 5.13 mm | - |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 40 V |
Id Continuous Drain Current | - | - | 131 A |
Rds On Drain Source Resistance | - | - | 1.63 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1.1 V |
Vgs Gate Source Voltage | - | - | 20 V, - 16 V |
Qg Gate Charge | - | - | 100 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 48 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 N-Channel TrenchFET Power MOSFET |
Forward Transconductance Min | - | - | 98 S |
Fall Time | - | - | 6 ns |
Rise Time | - | - | 6 ns |
Typical Turn Off Delay Time | - | - | 38 ns |
Typical Turn On Delay Time | - | - | 17 ns |