PartNumber | SIR164DP-T1-GE3 | SIR164ADP-T1-GE3 | SIR164DP-T1-RE3 |
Description | MOSFET 30V 50A 69W 2.5mohm @ 10V | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds TrenchFET PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | SO-8 |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SIR | SIR | SIR |
Width | 5.15 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SIR164DP-GE3 | - | - |
Unit Weight | 0.017870 oz | - | 0.002610 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
Id Continuous Drain Current | - | 40 A | 50 A |
Rds On Drain Source Resistance | - | 2.2 mOhms | 20.5 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.1 V | 2.5 V |
Vgs Gate Source Voltage | - | 20 V, - 16 V | 20 V |
Qg Gate Charge | - | 77 nC | 82 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 62.5 W | 69 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 105 S | - |
Fall Time | - | 8 ns | 39 ns |
Rise Time | - | 10 ns | 41 ns |
Typical Turn Off Delay Time | - | 30 ns | 52 ns |
Typical Turn On Delay Time | - | 12 ns | 35 ns |