 |  | | |
| PartNumber | SIS407DN-T1-GE3 | SIS407DN | SIS407DN-T1-E3 |
| Description | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 9.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 38 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 33 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 60 S | - | - |
| Fall Time | 38 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 28 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 92 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| Part # Aliases | SIS407DN-GE3 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIS407DN-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 | |
| SIS407DN | Neu und Original | ||
| SIS407DN-T1-E3 | Neu und Original | ||
Vishay |
SIS407DN-T1-GE3 | MOSFET P-CH 20V 25A 1212-8 PPAK |