 |  | | |
| PartNumber | SIS412DN-T1-GE3 | SIS412DN-T1-GE3-CUT TAPE | SIS412DN-T1-GE3 QFN8 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 10 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Series | SIS | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns, 12 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns, 15 ns | - | - |
| Typical Turn On Delay Time | 5 ns, 15 ns | - | - |
| Part # Aliases | SIS412DN-GE3 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIS412DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | |
| SIS412DN-T1-GE3-CUT TAPE | Neu und Original | ||
| SIS412DN-T1-GE3 QFN8 | Neu und Original | ||
| SIS412DN-T1-GE3-W | Neu und Original | ||
Vishay |
SIS412DN-T1-GE3 | MOSFET N-CH 30V 12A 1212-8 PPAK |