PartNumber | SIS472DN-T1-GE3 | SIS472ADN-T1-GE3 | SIS472BDN-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | 1.04 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | SIS | SIS | SIS |
Width | 3.3 mm | 3.3 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SIS472DN-GE3 | - | - |
Unit Weight | 0.017637 oz | - | - |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 38.3 A |
Rds On Drain Source Resistance | - | - | 7.5 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
Vgs Gate Source Voltage | - | - | 20 V, - 16 V |
Qg Gate Charge | - | - | 21.5 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 19.8 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Forward Transconductance Min | - | - | 54 S |
Fall Time | - | - | 7 ns |
Rise Time | - | - | 10 ns |
Typical Turn Off Delay Time | - | - | 15 ns |
Typical Turn On Delay Time | - | - | 15 ns |