SISS7

SISS71DN-T1-GE3 vs SISS70DN-T1-GE3 vs SISS72DN-T1-GE3

 
PartNumberSISS71DN-T1-GE3SISS70DN-T1-GE3SISS72DN-T1-GE3
DescriptionMOSFET -100V Vds 20V Vgs PowerPAK 1212-8SMOSFET 125V Vds 20V Vgs PowerPAK 1212-8SMOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK1212-8PowerPAK1212-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V125 V150 V
Id Continuous Drain Current23 A31 A25.5 A
Rds On Drain Source Resistance47 mOhms29.8 mOhms42 mOhms
Vgs th Gate Source Threshold Voltage2.5 V2.5 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge30 nC15.3 nC22 nC
Minimum Operating Temperature- 50 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation57 W65.8 W65.8 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameThunderFET, PowerPAKTrenchFET, ThunderFET, PowerPAKTrenchFET, ThunderFET, PowerPAK
PackagingReelReelReel
Height1.04 mm--
Length3.3 mm--
SeriesSISSISSIS
Transistor Type1 P-Channel1 N-Channel1 N-Channel
Width3.3 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min13 S16 S16 S
Fall Time11 ns10 ns9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time30 ns9 ns6 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns30 ns30 ns
Typical Turn On Delay Time35 ns20 ns18 ns
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SISS71DN-T1-GE3 MOSFET -100V Vds 20V Vgs PowerPAK 1212-8S
SISS73DN-T1-GE3 MOSFET P-Channel 150 V (D-S) MOSFET
SISS70DN-T1-GE3 MOSFET 125V Vds 20V Vgs PowerPAK 1212-8S
SISS72DN-T1-GE3 MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
Vishay
Vishay
SISS70DN-T1-GE3 MOSFET N-CH 125V
SISS72DN-T1-GE3 MOSFET N-CH 150V
SISS71DN-T1-GE3 MOSFET P-CH 100V 23A 1212-8
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