PartNumber | SPB04N60C3ATMA1 | SPB04N50C3 | SPB04N60C3 |
Description | MOSFET LOW POWER_LEGACY | Darlington Transistors MOSFET N-Ch 500V 4.5A D2PAK-2 CoolMOS C3 | Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3 |
Manufacturer | Infineon | infineon | INFINEON |
Product Category | MOSFET | FETs - Single | FETs - Single |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | - | - |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP000013533 SPB04N60C3ATMA1 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Series | - | CoolMOS C3 | CoolMOS C3 |
Part Aliases | - | SP000014477 SPB04N50C3ATMA1 SPB04N50C3XT | SP000013533 SPB04N60C3ATMA1 SPB04N60C3XT |
Package Case | - | TO-252-3 | TO-252-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | - | 50 W | 50 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Fall Time | - | 10 ns | 9.5 ns |
Rise Time | - | 5 ns | 2.5 ns |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 4.5 A | 4.5 A |
Vds Drain Source Breakdown Voltage | - | 500 V | 600 V |
Rds On Drain Source Resistance | - | 950 mOhms | 950 mOhms |
Transistor Polarity | - | N-Channel | N-Channel |
Typical Turn Off Delay Time | - | 70 ns | 58.5 ns |
Typical Turn On Delay Time | - | 10 ns | 6 ns |
Channel Mode | - | Enhancement | Enhancement |