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| PartNumber | SPB04N60C3ATMA1 | SPB04N50C3 | SPB04N60C3 |
| Description | MOSFET LOW POWER_LEGACY | Darlington Transistors MOSFET N-Ch 500V 4.5A D2PAK-2 CoolMOS C3 | Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3 |
| Manufacturer | Infineon | infineon | INFINEON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP000013533 SPB04N60C3ATMA1 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Series | - | CoolMOS C3 | CoolMOS C3 |
| Part Aliases | - | SP000014477 SPB04N50C3ATMA1 SPB04N50C3XT | SP000013533 SPB04N60C3ATMA1 SPB04N60C3XT |
| Package Case | - | TO-252-3 | TO-252-3 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 50 W | 50 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 10 ns | 9.5 ns |
| Rise Time | - | 5 ns | 2.5 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 4.5 A | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | 500 V | 600 V |
| Rds On Drain Source Resistance | - | 950 mOhms | 950 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 70 ns | 58.5 ns |
| Typical Turn On Delay Time | - | 10 ns | 6 ns |
| Channel Mode | - | Enhancement | Enhancement |