SPB04N60C3

SPB04N60C3
Mfr. #:
SPB04N60C3
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPB04N60C3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
CoolMOS C3
Verpackung
Spule
Teil-Aliasnamen
SP000013533 SPB04N60C3ATMA1 SPB04N60C3XT
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
50 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
9.5 ns
Anstiegszeit
2.5 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
4.5 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
950 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
58.5 ns
Typische-Einschaltverzögerungszeit
6 ns
Kanal-Modus
Erweiterung
Tags
SPB04N60C3, SPB04N60C, SPB04N6, SPB04, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-263 T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N, 600V, D2-PAK; Transistor type:Enhancement; Voltage, Vds typ:650V; Current, Id cont:4.5A; Resistance, Rds on:0.95ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:3V; Case style:D2-PAK (TO-263); Current, Idm RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 4.5A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:50W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Teil # Mfg. Beschreibung Aktie Preis
SPB04N60C3ATMA1
DISTI # V72:2272_06383751
Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
4
  • 75000:$1.2253
  • 30000:$1.2393
  • 15000:$1.2533
  • 6000:$1.2676
  • 3000:$1.2819
  • 1000:$1.2965
  • 500:$1.3112
  • 250:$1.3261
  • 100:$1.3411
  • 50:$1.3564
  • 25:$1.3717
  • 10:$1.3874
  • 1:$1.5112
SPB04N60C3ATMA1
DISTI # SPB04N60C3ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 4.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11In Stock
  • 10:$1.7150
  • 1:$1.9000
SPB04N60C3ATMA1
DISTI # SPB04N60C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 4.5A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SPB04N60C3ATMA1
    DISTI # SPB04N60C3ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 4.5A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SPB04N60C3
      DISTI # 30579453
      Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-263
      RoHS: Compliant
      38
      • 21:$1.1501
      SPB04N60C3Infineon Technologies AGPower Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      3500
      • 1000:$0.6300
      • 500:$0.6700
      • 100:$0.6900
      • 25:$0.7200
      • 1:$0.7800
      SPB04N60C3ATMA1Infineon Technologies AGPower Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      18653
      • 1000:$0.7400
      • 500:$0.7800
      • 100:$0.8100
      • 25:$0.8400
      • 1:$0.9100
      SPB04N60C3E3045AInfineon Technologies AG 
      RoHS: Not Compliant
      2000
      • 1000:$0.3400
      • 500:$0.3600
      • 100:$0.3800
      • 25:$0.3900
      • 1:$0.4200
      SPB04N60C3ATMA1
      DISTI # 7528479P
      Infineon Technologies AGMOSFET N-CHANNEL 600V 4.5A COOLMOS TO263, RL692
      • 10:£0.8750
      • 50:£0.7750
      • 250:£0.6700
      • 500:£0.6250
      SPB04N60C3Infineon Technologies AGMOSFET Transistor, N-Channel, TO-263AB75
      • 61:$0.6000
      • 14:$1.0000
      • 1:$2.0000
      SPB04N60C3Infineon Technologies AG 94
      • 4:$1.5000
      • 15:$0.9750
      • 53:$0.5625
      SPB04N60C3Infineon Technologies AGPower Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      Europe - 1600
        SPB04N60C3
        DISTI # C1S322000009417
        Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-263
        RoHS: Compliant
        38
        • 10:$0.9020
        • 5:$0.9660
        SPB04N60C3ATMA1
        DISTI # C1S322000215081
        Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant
        4
        • 10:$1.3874
        SPB04N60C3ATMA1
        DISTI # 2480877RL
        Infineon Technologies AGMOSFET, N-CH, 600V, 4.5A, TO-263-3
        RoHS: Compliant
        0
        • 1:$2.5400
        • 10:$2.1600
        • 100:$1.7300
        • 500:$1.5100
        • 1000:$1.2400
        • 2000:$1.1600
        • 5000:$1.1200
        • 10000:$1.1000
        SPB04N60C3ATMA1
        DISTI # 2480877
        Infineon Technologies AGMOSFET, N-CH, 600V, 4.5A, TO-263-3
        RoHS: Compliant
        0
        • 1:$2.5400
        • 10:$2.1600
        • 100:$1.7300
        • 500:$1.5100
        • 1000:$1.2400
        • 2000:$1.1600
        • 5000:$1.1200
        • 10000:$1.1000
        Bild Teil # Beschreibung
        SPB04N60S5ATMA1

        Mfr.#: SPB04N60S5ATMA1

        OMO.#: OMO-SPB04N60S5ATMA1

        MOSFET LOW POWER_LEGACY
        SPB04N50C3

        Mfr.#: SPB04N50C3

        OMO.#: OMO-SPB04N50C3-124

        Darlington Transistors MOSFET N-Ch 500V 4.5A D2PAK-2 CoolMOS C3
        SPB04N60C3

        Mfr.#: SPB04N60C3

        OMO.#: OMO-SPB04N60C3-124

        Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3
        SPB04N60S5

        Mfr.#: SPB04N60S5

        OMO.#: OMO-SPB04N60S5-128

        MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS S5
        SPB04N60C3ATMA1

        Mfr.#: SPB04N60C3ATMA1

        OMO.#: OMO-SPB04N60C3ATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 650V 4.5A D2PAK
        SPB04N60S5ATMA1

        Mfr.#: SPB04N60S5ATMA1

        OMO.#: OMO-SPB04N60S5ATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 4.5A TO-263
        SPB04N50C3ATMA1

        Mfr.#: SPB04N50C3ATMA1

        OMO.#: OMO-SPB04N50C3ATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 560V 4.5A TO-263
        SPB04N50C3_05

        Mfr.#: SPB04N50C3_05

        OMO.#: OMO-SPB04N50C3-05-1190

        Neu und Original
        SPB04N60C2

        Mfr.#: SPB04N60C2

        OMO.#: OMO-SPB04N60C2-1190

        Neu und Original
        SPB04N60C3E3045A

        Mfr.#: SPB04N60C3E3045A

        OMO.#: OMO-SPB04N60C3E3045A-1190

        Trans MOSFET N-CH 650V 4.5A 3-Pin TO-263 T/R - Bulk (Alt: SPB04N60C3E3045A)
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von SPB04N60C3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,84 $
        0,84 $
        10
        0,80 $
        8,02 $
        100
        0,76 $
        75,94 $
        500
        0,72 $
        358,60 $
        1000
        0,68 $
        675,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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