PartNumber | SPB04N60C3ATMA1 | SPB04N60C3 | SPB04N60C3E3045A |
Description | MOSFET LOW POWER_LEGACY | Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3 | Trans MOSFET N-CH 650V 4.5A 3-Pin TO-263 T/R - Bulk (Alt: SPB04N60C3E3045A) |
Manufacturer | Infineon | INFINEON | - |
Product Category | MOSFET | FETs - Single | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | - | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP000013533 SPB04N60C3ATMA1 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Series | - | CoolMOS C3 | - |
Part Aliases | - | SP000013533 SPB04N60C3ATMA1 SPB04N60C3XT | - |
Package Case | - | TO-252-3 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 50 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 9.5 ns | - |
Rise Time | - | 2.5 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 4.5 A | - |
Vds Drain Source Breakdown Voltage | - | 600 V | - |
Rds On Drain Source Resistance | - | 950 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 58.5 ns | - |
Typical Turn On Delay Time | - | 6 ns | - |
Channel Mode | - | Enhancement | - |