PartNumber | SPD15P10P G | SPD15P10PL G | SPD15P10PGBTMA1 |
Description | MOSFET P-Ch -100V 15A DPAK-2 | MOSFET P-Ch -100V 15A DPAK-2 | MOSFET P-Ch -100V 15A DPAK-2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 15 A | 15 A | 15 A |
Rds On Drain Source Resistance | 240 mOhms | 140 mOhms | 160 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 2 V | 4 V |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 37 nC | 62 nC | 48 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 128 W | 128 W | 128 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | SIPMOS | SIPMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | SPD15P10 | SPD15P10 | XPD15P10 |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 4.7 S | 5.5 S | 4.7 S |
Fall Time | 16 ns | 29 ns | 16 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 23 ns | 21 ns | 23 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | 50 ns | 33 ns |
Typical Turn On Delay Time | 9.5 ns | 7.6 ns | 9.5 ns |
Part # Aliases | SP000212233 SPD15P10PGBTMA1 SPD15P1PGXT | SP000317393 SPD15P10PLGBTMA1 SPD15P1PLGXT | G SP000212233 SPD15P10P SPD15P1PGXT |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |