SPD18P06P stock, SPD18P06P, SPD18P06P G


PartNumber	SPD18P06P G	SPD18P06PGBTMA1	SPD18P06P
Description	MOSFET P-Ch -60V -18.6A DPAK-2	MOSFET P-Ch -60V -18.6A DPAK-2	MOSFET P-CH 60V 18.6A TO-252
Manufacturer	Infineon	Infineon	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	PG-TO-252-3	TO-252-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	P-Channel	P-Channel	-
Vds Drain Source Breakdown Voltage	60 V	60 V	-
Id Continuous Drain Current	18.6 A	18.6 A	-
Rds On Drain Source Resistance	130 mOhms	100 mOhms	-
Vgs th Gate Source Threshold Voltage	4 V	4 V	-
Vgs Gate Source Voltage	10 V	20 V	-
Qg Gate Charge	22 nC	33 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 175 C	-
Pd Power Dissipation	80 W	80 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	SIPMOS	-	-
Packaging	Reel	Reel	-
Height	2.3 mm	2.3 mm	-
Length	6.5 mm	6.5 mm	-
Series	SPD18P06	XPD18P06	-
Transistor Type	1 P-Channel	1 P-Channel	-
Width	6.22 mm	6.22 mm	-
Brand	Infineon Technologies	Infineon Technologies	-
Forward Transconductance Min	4 S	4 S	-
Fall Time	11 ns	11 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	5.8 ns	5.8 ns	-
Factory Pack Quantity	2500	2500	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	24.5 ns	24.5 ns	-
Typical Turn On Delay Time	12 ns	12 ns	-
Part # Aliases	SP000443926 SPD18P06PGBTMA1 SPD18P6PGXT	G SP000443926 SPD18P06P SPD18P6PGXT	-
Unit Weight	0.139332 oz	0.139332 oz	-

Search Part Number : "SPD18P06P", Match & Start with "SPD18P06P" - Total : 6

Hersteller	Teil #	Beschreibung
Infineon Technologies	SPD18P06P G	MOSFET P-Ch -60V -18.6A DPAK-2
	SPD18P06PGBTMA1	MOSFET P-Ch -60V -18.6A DPAK-2
	SPD18P06P	MOSFET P-CH 60V 18.6A TO-252
	SPD18P06PGBTMA1	MOSFET P-CH 60V 18.6A TO252-3
	SPD18P06P G	MOSFET P-Ch -60V -18.6A DPAK-2
	SPD18P06PG	Trans MOSFET P-CH 60V 18.6A 3-Pin TO-252 T/R (Alt: SP000443926)

SPD18P06P