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SPD18P06P G

SPD18P06P G
Mfr. #:
SPD18P06P G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -60V -18.6A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPD18P06P G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
18.6 A
Rds On - Drain-Source-Widerstand:
130 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
80 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SIPMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
SPD18P06
Transistortyp:
1 P-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
4 S
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
5.8 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24.5 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
SP000443926 SPD18P06PGBTMA1 SPD18P6PGXT
Gewichtseinheit:
0.139332 oz
Tags
SPD18P06PG, SPD18P06P, SPD18, SPD1, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SPD18P06PGBTMA1
DISTI # SPD18P06PGBTMA1CT-ND		Infineon Technologies AGMOSFET P-CH 60V 18.6A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3In Stock
  • 1000:$0.5743
  • 500:$0.7274
  • 100:$0.9380
  • 10:$1.1870
  • 1:$1.3400
SPD18P06PGBTMA1
DISTI # SPD18P06PGBTMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 60V 18.6A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3In Stock
  • 1000:$0.5743
  • 500:$0.7274
  • 100:$0.9380
  • 10:$1.1870
  • 1:$1.3400
SPD18P06PGBTMA1
DISTI # SPD18P06PGBTMA1TR-ND		Infineon Technologies AGMOSFET P-CH 60V 18.6A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.5204
SPD18P06PGBT
DISTI # SPD18P06PGBTMA1		Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD18P06PGBTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3889
  • 5000:$0.3749
  • 10000:$0.3609
  • 15000:$0.3489
  • 25000:$0.3429
SPD18P06PGBTMA1
DISTI # 47W3761		Infineon Technologies AGMOSFET, P CHANNEL, 60V, 18.6A, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-18.6A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes0
  • 1:$1.1100
  • 10:$0.9460
  • 100:$0.7270
  • 500:$0.6430
  • 1000:$0.5330
SPD18P06P G
DISTI # 726-SPD18P06P		Infineon Technologies AGMOSFET P-Ch -60V -18.6A DPAK-2
RoHS: Compliant		296
  • 1:$1.1100
  • 10:$0.9460
  • 100:$0.7270
  • 500:$0.6430
  • 1000:$0.5070
  • 2500:$0.4500
SPD18P06PGBTMA1
DISTI # 726-SPD18P06PGBTMA1		Infineon Technologies AGMOSFET P-Ch -60V -18.6A DPAK-2
RoHS: Compliant		0
  • 1:$1.1100
  • 10:$0.9460
  • 100:$0.7270
  • 500:$0.6430
  • 1000:$0.5070
  • 2500:$0.4500
SPD18P06PGInfineon Technologies AGPower Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
RoHS: Compliant		64200
  • 1000:$0.4500
  • 500:$0.4700
  • 100:$0.4900
  • 25:$0.5100
  • 1:$0.5500
SPD18P06PGBTMA1
DISTI # 7528491		Infineon Technologies AGMOSFET P-CHANNEL 60V 18.6A TO252, PK65
  • 5:£0.8580
  • 10:£0.6840
  • 20:£0.6700
  • 40:£0.6560
  • 75:£0.6160
SPD18P06P GInfineon Technologies AG 470
  • 354:$1.5180
  • 164:$1.7020
  • 1:$3.6800
SPD18P06PGInfineon Technologies AGPower Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
RoHS: Compliant		Europe - 2400
    SPD18P06P GInfineon Technologies AG 701
      SPD18P06P GInfineon Technologies AGRoHS(ship within 1day)588
      • 1:$2.2900
      • 10:$1.7200
      • 50:$1.4300
      • 100:$1.1400
      • 500:$0.9700
      • 1000:$0.9200
      SPD18P06PGBTMA1
      DISTI # 2212859      		Infineon Technologies AGMOSFET, P-CH, 60V, 18.6A, TO-252
      RoHS: Compliant      		0
      • 5:£0.6830
      • 25:£0.6280
      • 100:£0.5610
      • 250:£0.5290
      • 500:£0.4970
      SPD18P06PGBTMA1
      DISTI # 2212859      		Infineon Technologies AGMOSFET, P-CH, 60V, 18.6A, TO-252
      RoHS: Compliant      		0
      • 1:$1.7600
      • 10:$1.5100
      • 100:$1.1600
      • 500:$1.0200
      • 1000:$0.9090
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      Verfügbarkeit
      Aktie:
      11
      Auf Bestellung:
      1994
      Menge eingeben:
      Der aktuelle Preis von SPD18P06P G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,10 $
      1,10 $
      10
      0,95 $
      9,46 $
      100
      0,73 $
      72,70 $
      500
      0,64 $
      321,50 $
      1000
      0,51 $
      507,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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