 |  | |
| PartNumber | SPD18P06PGBTMA1 | SPD18P06PG |
| Description | MOSFET P-Ch -60V -18.6A DPAK-2 | Trans MOSFET P-CH 60V 18.6A 3-Pin TO-252 T/R (Alt: SP000443926) |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-252-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 18.6 A | - |
| Rds On Drain Source Resistance | 100 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 33 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 80 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 2.3 mm | - |
| Length | 6.5 mm | - |
| Series | XPD18P06 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 6.22 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 4 S | - |
| Fall Time | 11 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 5.8 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 24.5 ns | - |
| Typical Turn On Delay Time | 12 ns | - |
| Part # Aliases | G SP000443926 SPD18P06P SPD18P6PGXT | - |
| Unit Weight | 0.139332 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD18P06PGBTMA1 | MOSFET P-Ch -60V -18.6A DPAK-2 | |
| SPD18P06PGBTMA1 | MOSFET P-CH 60V 18.6A TO252-3 | ||
| SPD18P06PG | Trans MOSFET P-CH 60V 18.6A 3-Pin TO-252 T/R (Alt: SP000443926) |