 | | |
| PartNumber | SQ1470AEH-T1_GE3 | SQ1470EH-T1-GE3 |
| Description | MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ1470AEH-T1_GE3 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 1.7 A | - |
| Rds On Drain Source Resistance | 45 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - |
| Vgs Gate Source Voltage | 12 V | - |
| Qg Gate Charge | 5.2 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 3.3 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1 mm | 1 mm |
| Length | 2.1 mm | 2.1 mm |
| Series | SQ | SQ |
| Transistor Type | 1 N-Channel | - |
| Width | 1.25 mm | 1.25 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 14 S | - |
| Fall Time | 8 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 13 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | - |
| Typical Turn On Delay Time | 10 ns | - |
| Unit Weight | 0.000265 oz | 0.000265 oz |
| Part # Aliases | - | SQ1470EH-GE3 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ1470AEH-T1_GE3 | MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified | |
| SQ1470EH-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ1470AEH-T1_GE3 | ||
Vishay |
SQ1470AEH-T1_GE3 | MOSFET N-CH 30V 2.8A SC70 | |
| SQ1470EH-T1-GE3 | MOSFET N-CH 30V 2.8A SC70 | ||
| SQ1470AEH | Neu und Original | ||
| SQ1470AEH-T1-GE3 | N-CHANNEL 30-V (D-S) 175C MSFT | ||
| SQ1470EH | Neu und Original |