 | | | |
| PartNumber | SQ2318AES-T1_GE3 | SQ2310ES-T1_GE3 | SQ2318AES-T1-GE3 |
| Description | MOSFET N-Channel 40V AEC-Q101 Qualified | MOSFET 20V 6A 2W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ2318AES-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | TO-236-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 20 V | - |
| Id Continuous Drain Current | 8 A | 6 A | - |
| Rds On Drain Source Resistance | 31 mOhms | 24 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 400 mV | - |
| Vgs Gate Source Voltage | 10 V | 8 V | - |
| Qg Gate Charge | 8.7 nC | 8.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 3 W | 2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 30 S | 27 S | - |
| Fall Time | 5.7 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.4 ns | 8 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 21 ns | - |
| Typical Turn On Delay Time | 7.5 ns | 7 ns | - |
| Unit Weight | 0.000282 oz | 0.050717 oz | 0.000282 oz |
| Height | - | - | 1.45 mm |
| Length | - | - | 2.9 mm |
| Width | - | - | 1.6 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2319ADS-T1_GE3 | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | |
| SQ2318AES-T1_GE3 | MOSFET N-Channel 40V AEC-Q101 Qualified | ||
| SQ2310ES-T1_GE3 | MOSFET 20V 6A 2W AEC-Q101 Qualified | ||
| SQ2318AES-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ2318AES-T1_GE3 | ||
| SQ2310ES | Neu und Original | ||
| SQ2310ES-T1-GE3 | Trans MOSFET N-CH 20V 6A Automotive 3-Pin SOT-23 T/R | ||
| SQ2310ES-TI-GE3 | Neu und Original | ||
| SQ2315ES | Neu und Original | ||
| SQ2315ES-T1-E3 | Neu und Original | ||
| SQ2315ES-T1-GE3 | P-CHANNEL 12-V (D-S) 175C MOSF | ||
| SQ2318AE3-T1-GE3 | Neu und Original | ||
| SQ2318AES-T1-GE3 | N-CHANNEL 40-V (D-S) 175C MOSF | ||
| SQ2318AES-T1-GES | Neu und Original | ||
| SQ2318ASE | Neu und Original | ||
| SQ2318ES-T1-GE3 | Neu und Original | ||
| SQ2318EST1GE3 | Small Signal Field-Effect Transistor, 6A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| SQ2319ADS-T1 GE3 | Neu und Original | ||
| SQ2319AES-T1-E3 | Neu und Original | ||
| SQ2319ES | Neu und Original | ||
| SQ2319ES-T1 | Neu und Original | ||
| SQ2319EST1GE3 | Power Field-Effect Transistor, 3.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | ||
Vishay |
SQ2310ES-T1_GE3 | MOSFET N-CH 20V 6A SOT23 | |
| SQ2315ES-T1_GE3 | MOSFET P-CHAN 12V SOT23 | ||
| SQ2318AES-T1_GE3 | MOSFET N-CHAN 40V SOT23 | ||
| SQ2319ADS-T1_GE3 | MOSFET P-CH 40V 4.6A SOT23-3 | ||
| SQ2319ES-T1-GE3 | MOSFET P-CH 40V 4.6A TO-236 |