SQ235

SQ2351ES-T1_GE3 vs SQ2351ES-T1-GE3 vs SQ2351ES-T1-GE3 (VISHAY)

 
PartNumberSQ2351ES-T1_GE3SQ2351ES-T1-GE3SQ2351ES-T1-GE3 (VISHAY)
DescriptionMOSFET P-Channel 20V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ2351ES-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-236-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.2 A--
Rds On Drain Source Resistance80 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge5.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min6 S--
Fall Time8 ns--
Product TypeMOSFETMOSFET-
Rise Time18 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.000423 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ2351ES-T1_GE3 MOSFET P-Channel 20V AEC-Q101 Qualified
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Vishay
Vishay
SQ2351ES-T1_GE3 MOSFET P-CHAN 20V SOT23
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