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| PartNumber | SQ2362ES-T1_GE3 | SQ2362ES-T1_GE3-CUT TAPE | SQ2362ES-T1-GE3 |
| Description | MOSFET N-Channel 60V AEC-Q101 Qualified | MOSFET N-CHANNEL 60V | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 4.3 A | - | - |
| Rds On Drain Source Resistance | 68 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 7.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2362ES-T1_GE3 | MOSFET N-Channel 60V AEC-Q101 Qualified | |
| SQ2362ES-T1_GE3-CUT TAPE | Neu und Original | ||
| SQ2362ES-T1-GE3 | MOSFET N-CHANNEL 60V | ||
| SQ2362ES-TI-GE3 | Neu und Original | ||
Vishay |
SQ2362ES-T1_GE3 | MOSFET N-CH 60V 4.4A TO236 |