SQD15N06-42L_G

SQD15N06-42L_GE3 vs SQD15N06-42L_GE3-CUT TAPE vs SQD15N06-42L-GE3

 
PartNumberSQD15N06-42L_GE3SQD15N06-42L_GE3-CUT TAPESQD15N06-42L-GE3
DescriptionMOSFET 60V 15A 37W AEC-Q101 QualifiedN-CHANNEL 60V DPAK
ManufacturerVishay-
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current15 A--
Rds On Drain Source Resistance36 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation37 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
TradenameTrenchFET-TrenchFET
PackagingReel-Reel
SeriesSQ-SQ Series
Transistor Type1 N-Channel-1 N-Channel
BrandVishay / Siliconix--
Forward Transconductance Min11 S--
Fall Time8 ns-7 ns
Product TypeMOSFET--
Rise Time10 ns-8 ns
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns-15 ns
Typical Turn On Delay Time5 ns-7 ns
Unit Weight0.050717 oz-0.050717 oz
Package Case--TO-252-3
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--15 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--42 mOhms
Qg Gate Charge--9.5 nC
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD15N06-42L_GE3 MOSFET 60V 15A 37W AEC-Q101 Qualified
SQD15N06-42L_GE3-CUT TAPE Neu und Original
SQD15N06-42L-GE3 N-CHANNEL 60V DPAK
Vishay
Vishay
SQD15N06-42L_GE3 MOSFET N-CH 60V 15A
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