SQM120N04-1m9

SQM120N04-1m9_GE3 vs SQM120N04-1M9-GE3 vs SQM120N04-1M9

 
PartNumberSQM120N04-1m9_GE3SQM120N04-1M9-GE3SQM120N04-1M9
DescriptionMOSFET 40V 120A 300W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQM120N041M9GE
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance1.5 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge270 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesSQSQ-
Transistor Type1 N-Channel--
Width9.65 mm9.65 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min166 S--
Fall Time92 ns--
Product TypeMOSFETMOSFET-
Rise Time5 ns--
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time248 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.068654 oz0.068654 oz-
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM120N04-1m9_GE3 MOSFET 40V 120A 300W AEC-Q101 Qualified
SQM120N04-1M9-GE3 MOSFET RECOMMENDED ALT 781-SQM120N041M9GE
SQM120N04-1M9-GE3 RF Bipolar Transistors MOSFET 40V 120A 300W TrenchFET
SQM120N04-1M9 Neu und Original
Vishay
Vishay
SQM120N04-1M9_GE3 MOSFET N-CH 40V 120A TO263
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