SQS42

SQS420EN-T1_GE3 vs SQS423EN-T1-GE3 vs SQS420EN-T1-GE3

 
PartNumberSQS420EN-T1_GE3SQS423EN-T1-GE3SQS420EN-T1-GE3
DescriptionMOSFET 20V 8A 18W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQS423EN-T1_GE3IGBT Transistors MOSFET 20V 8A 18W TrenchFET
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance23.5 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation18 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm--
Length3.3 mm--
SeriesSQSQ-
Transistor Type1 N-Channel--
Width3.3 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min36 S--
Fall Time8 ns--
Product TypeMOSFETMOSFET-
Rise Time8 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time8 ns--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SQS423EN-T1_GE3 MOSFET P-Channel 30V AEC-Q101 Qualified
SQS420EN-T1_GE3 MOSFET 20V 8A 18W AEC-Q101 Qualified
SQS423EN-T1-GE3 MOSFET RECOMMENDED ALT 78-SQS423EN-T1_GE3
SQS420EN-T1-GE3 IGBT Transistors MOSFET 20V 8A 18W TrenchFET
SQS423EN-T1-GE3 RF Bipolar Transistors MOSFET P-Channel 30V Automotive MOSFET
Vishay
Vishay
SQS420EN-T1_GE3 MOSFET N-CH 20V 8A 1212-8
SQS423EN-T1_GE3 MOSFET P-CH 30V 16A POWERPAK1212
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