 |  | | |
| PartNumber | SSM3J168F,LF | SSM3J16CT | SSM3J168F |
| Description | MOSFET LowON Res MOSFET ID=--0.4A VDSS=-60V | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-346-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 400 mA | - | - |
| Rds On Drain Source Resistance | 1.3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V, - 20 V | - | - |
| Qg Gate Charge | 3 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1200 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | SSM3J168F | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 31.7 ns | - | - |
| Typical Turn On Delay Time | 4.3 ns | - | - |
| Unit Weight | 0.004233 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
SSM3J168F,LF | MOSFET LowON Res MOSFET ID=--0.4A VDSS=-60V | |
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