PartNumber | SSM3K35AMFV,L3F | SSM3K357R,LF | SSM3K35AFS,LF |
Description | MOSFET LowON Res MOSFET ID=.25A VDSS=20V | MOSFET LowON Res MOSFET ID=.65A VDSS=60V | MOSFET LowON Res MOSFET ID=.25A VDSS=20V |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | VESM-3 | SOT-23F-3 | SSM-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 60 V | 20 V |
Id Continuous Drain Current | 250 mA | 650 mA | 250 mA |
Rds On Drain Source Resistance | 750 mOhms | 1.8 Ohms | 750 mOhms |
Vgs th Gate Source Threshold Voltage | 350 mV | 1.3 V | 350 mV |
Vgs Gate Source Voltage | 10 V | 12 V | 10 V |
Qg Gate Charge | 340 pC | 1.5 nC | 340 pC |
Minimum Operating Temperature | - | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 500 mW | 1.5 W | 500 mW |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | Toshiba | Toshiba | Toshiba |
Forward Transconductance Min | 0.5 S | 500 mS | 0.5 S |
Fall Time | 5.5 ns | - | 5.5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2 ns | - | 2 ns |
Factory Pack Quantity | 8000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 6.5 ns | 3000 ns | 6.5 ns |
Typical Turn On Delay Time | 2 ns | 990 ns | 2 ns |
Series | - | SSM3K357R | - |