PartNumber | SSM6N357R,LF | SSM6N35AFE,LF | SSM6N35AFU,LF |
Description | MOSFET LowON Res MOSFET ID=.65A VDSS=60V | MOSFET LowON Res MOSFET ID=.25A VDSS=20V | MOSFET LowON Res MOSFET ID=.25A VDSS=20V |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOP-6F | SOT-563-6 | SOT-363-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 20 V | 20 V |
Id Continuous Drain Current | 650 mA | 250 mA | 250 mA |
Rds On Drain Source Resistance | 1.8 Ohms | 750 mOhms | 750 mOhms, 750 mOhms |
Vgs th Gate Source Threshold Voltage | 1.3 V | 350 mV | 350 mV |
Vgs Gate Source Voltage | 12 V | 10 V | 10 V |
Qg Gate Charge | 1.5 nC | 340 pC | 340 pC, 340 pC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1 W | 250 mW | 285 mW |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Series | SSM6N357R | SSM6N35AFE | SSM6N35AFU |
Brand | Toshiba | Toshiba | Toshiba |
Forward Transconductance Min | 500 mS | 0.5 S | 0.5 S, 0.5 S |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 4000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 3000 ns | 6.5 ns | 6.5 ns, 6.5 ns |
Typical Turn On Delay Time | 990 ns | 2 ns | 2 ns, 2 ns |
Unit Weight | 0.000564 oz | 0.000106 oz | 0.000212 oz |
Minimum Operating Temperature | - | - | - |
Transistor Type | - | 2 N-Channel | 2 N-Channel |
Fall Time | - | 5.5 ns | 5.5 ns, 5.5 ns |
Rise Time | - | 2 ns | 2 ns, 2 ns |