 |  | | |
| PartNumber | SSM6N35AFE,LF | SSM6N35AFE | SSM6N35AFU |
| Description | MOSFET LowON Res MOSFET ID=.25A VDSS=20V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 250 mA | - | - |
| Rds On Drain Source Resistance | 750 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 350 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 340 pC | - | - |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | SSM6N35AFE | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | 0.5 S | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 6.5 ns | - | - |
| Typical Turn On Delay Time | 2 ns | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
SSM6N35AFE,LF | MOSFET LowON Res MOSFET ID=.25A VDSS=20V | |
| SSM6N35AFU,LF | MOSFET LowON Res MOSFET ID=.25A VDSS=20V | ||
| SSM6N35AFULF(T | Neu und Original | ||
| SSM6N35AFE | Neu und Original | ||
| SSM6N35AFU | Neu und Original |