PartNumber | SSM6N39TU,LF | SSM6N39TU | SSM6N39TU(RSONYF) |
Description | MOSFET LowON Res MOSFET ID=1.6A VDSS=20V | ||
Manufacturer | Toshiba | TOSHIBA | - |
Product Category | MOSFET | IC Chips | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | UF-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 1.6 A | - | - |
Rds On Drain Source Resistance | 87 mOhms, 87 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 350 mV | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 7.5 nC, 7.5 nC | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 500 mW | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Series | SSM6N39TU | - | - |
Transistor Type | 2 N-Channel | - | - |
Brand | Toshiba | - | - |
Forward Transconductance Min | 2.5 S, 2.5 S | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 8.3 ns, 8.3 ns | - | - |
Typical Turn On Delay Time | 11.5 ns, 11.5 ns | - | - |
Unit Weight | 0.000247 oz | - | - |